NTD360N80S3Z دیتاشیت

NTD360N80S3Z

مشخصات دیتاشیت

نام دیتاشیت NTD360N80S3Z
حجم فایل 68.5 کیلوبایت
نوع فایل pdf
تعداد صفحات 9

مشاهده دیتاشیت NTD360N80S3Z

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مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTD360N80S3Z
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 96W
  • Total Gate Charge (Qg@Vgs): 25.3nC@10V
  • Drain Source Voltage (Vdss): 800V
  • Input Capacitance (Ciss@Vds): 1143pF@400V
  • Continuous Drain Current (Id): 13A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.8V@300uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 300mΩ@10V,6.5A
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: SuperFET® III
  • Packaging: Tape & Reel (TR)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 6.5A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.3nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 400V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • detail: N-Channel 800V 13A (Tc) 96W (Tc) Surface Mount D-PAK (TO-252)

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